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| ST103SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 105 A FEATURES * All diffused design * Center amplifying gate * Guaranteed high dV/dt * Guaranteed high dI/dt * High surge current capability * Low thermal impedance * High speed performance TO-209AC (TO-94) RoHS COMPLIANT * Compression bonding * Lead (Pb)-free * Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 105 A TYPICAL APPLICATIONS * Inverters * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range TEST CONDITIONS VALUES 105 TC 85 165 3000 3150 45 41 400 to 800 10 to 25 - 40 to 125 V s C kA2s A UNITS A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST103S 08 800 900 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 30 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94365 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST103SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 105 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 280 310 320 340 50 VDRM 50 60 22/0.15 180 200 200 210 440 470 480 490 50 VDRM - 330 300 310 320 4730 2500 1530 840 50 VDRM - 3630 1850 1090 580 V A/s 85 22/0.15 C /F A 85 60 22/0.15 85 60 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 76 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 105 85 165 3000 3150 2530 Sinusoidal half wave, initial TJ = TJ maximum 2650 45 41 32 29 450 1.73 1.32 1.35 1.40 1.30 600 1000 mA m V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94365 Revision: 29-Apr-08 ST103SP Series Inverter Grade Thyristors (Stud Version), 105 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time Maximum turn-off time minimum maximum SYMBOL dI/dt td tq TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/s VR = 50 V, tp = 200 s, dV/dt: See table in device code VALUES 1000 0.80 10 25 s UNITS A/s Vishay High Power Products BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 30 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 40 5 5 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.195 K/W 0.08 15.5 (137) 14 (120) 130 UNITS C N*m (lbf in) g TO-209AC (TO-94) Document Number: 94365 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST103SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 105 A RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.034 0.040 0.052 0.076 0.126 RECTANGULAR CONDUCTION 0.025 0.042 0.056 0.079 0.127 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) ST103S Series RthJC (DC) = 0.195 K/W 120 120 110 100 90 80 ST103S Series RthJC (DC) = 0.195 K/W 110 O O Conduction period Conduction angle 100 90 30 80 0 10 20 30 40 50 60 70 80 90 100 110 60 90 120 180 30 70 0 20 40 60 90 60 80 120 180 DC 100 120 140 160 180 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 180 180 Maximum Average On-State Power Loss (W) Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 40 20 0 0 180 120 90 60 30 RMS limit O 160 140 120 100 80 60 40 20 0 25 0. 0. 3 K/ W 2 R th 0.4 0.5 K/ W SA = 0. K/ W 1 K/ K/ W W R - 0.8 1.2 K/W K/W Conduction angle ST083S Series TJ = 125 C 10 20 30 40 50 60 70 80 90 100 110 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94365 Revision: 29-Apr-08 ST103SP Series Inverter Grade Thyristors (Stud Version), 105 A 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 260 240 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 Vishay High Power Products Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) DC 180 120 90 60 30 0.2 0.3 R RMS limit K/ th W SA = 0. 1 K 0.4 /W K 0.5 /W K/W K/ W - R O Conduction angle ST103S Series TJ = 125 C 80 100 120 140 160 180 0.8 K/W 1.2 K /W Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 2600 2400 2200 2000 1800 1600 1400 1200 1 10 ST103S Series Instantaneous On-State Current (A) 2800 10 000 Peak Half Sine Wave On-State Current (A) TJ = 25 C TJ = 125 C 1000 ST103S Series 100 100 1 2 3 4 5 6 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 3000 2800 Peak Half Sine Wave On-State Current (A) 2600 2400 2200 2000 1800 1600 1400 1200 0.01 ZthJC - Transient Thermal Impedance (K/W) Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 1 Steady state value RthJC = 0.195 K/W (DC operation) 0.1 ST103S Series ST103S Series 0.1 1 0.01 0.001 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Document Number: 94365 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST103SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 105 A 160 140 120 ITM = 200 A 100 ITM = 100 A 80 60 ITM = 50 A 40 20 10 20 30 40 50 60 70 80 90 100 ST103S Series TJ = 125 C ITM = 500 A ITM = 300 A Irr - Maximum Reverse Recovery Current (A) 120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 60 70 80 90 100 ST103S Series TJ = 125 C ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A Qrr - Maximum Reverse Recovery Charge (C) dI/dt - Rate of Fall of On-State Current (A/s) Fig. 9 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of Forward Current (A/s) Fig. 10 - Reverse Recovery Current Characteristics 10 000 10000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM tp 1000 2000 5000 10 000 1000 400 200 100 50 Hz 1000 ST103S Series Sinusoidal pulse TC = 85 C Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM tp ST103S Series Sinusoidal pulse TC = 60 C 10 000 5000 2000 1000 400 200 100 50 Hz 100 10 100 1000 10 000 100 10 100 1000 10 000 Pulse Basewidth (s) Fig. 11 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM tp ST103S Series Trapezoidal pulse TC = 85 C dI/dt = 50 A/s 1000 5000 1500 2500 1000 1500 2500 1000 400 200 100 50 Hz 1000 400 200 100 50 Hz 5000 tp 100 10 ST103S Series Trapezoidal pulse TC = 60 C dI/dt = 50 A/s 100 1000 10 000 100 10 100 1000 10 000 Pulse Basewidth (s) Fig. 12 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94365 Revision: 29-Apr-08 ST103SP Series Inverter Grade Thyristors (Stud Version), 105 A 10 000 10 000 Vishay High Power Products Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM tp ST103S Series Trapezoidal pulse TC = 85 C dI/dt = 100 A/s Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 1000 5000 10 000 1500 2500 1000 5000 10 000 2500 1500 1000 400 200 100 50 Hz 1000 400 200 100 50 Hz tp 100 10 ST103S Series Trapezoidal pulse TC = 60 C dI/dt = 100 A/s 100 1000 10 000 100 10 100 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) 100 000 100 000 Peak On-State Current (A) Peak On-State Current (A) tp ST103S Series Rectangular pulse dI/dt = 50 A/s 10 000 20 joules per pulse 10 235 10 000 20 joules per pulse 1000 0.1 0.2 0.5 1 1000 0.1 0.2 0.5 1 10 235 100 tp ST103S Series Sinusoidal pulse 100 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated di/dt: 10 V, 10 tr 1 s (a) (b) (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 40 C TJ = 25 C TJ = 125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST103S Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94365 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST103SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 105 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 10 2 - 3 3 S 4 08 5 P 6 F 7 N 8 0 9 P 10 Thyristor Essential part number 3 = Fast turn-off S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage ratings table) P = Stud base 1/2"-20UNF-2A Reapplied dV/dt code (for tq test conditions) tq code 0 = Eyelet terminals (gate and aux. cathode leads) 1 = Fast-on terminals (gate and aux. cathode leads) dV/dt - tq combinations available dV/dt (V/s) 20 50 100 200 400 CN DN EN FN* 10 CM DM EM FM HM 12 CL DL EL FL* HL tq (s) 15 18 CP DP EP FP HP CK DK EK FK HK 20 HJ 25 * Standard part number. All other types available only on request. 10 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95003 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94365 Revision: 29-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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